Samsung and IBM have developed a revolutionary technology for the distribution of transistors on a chip
- AIf Samsung and IBM engineers manage to finalize their technology, in the future we can expect a sharp jump in energy efficiency and computing power of processors. At a recent conference, the companies showed a revolutionary technology for the distribution of transistors on a chip.
The essence of the innovation is the placement of transistors perpendicularly and vertically on the silicon substrate, which will significantly increase the current limits of processor performance and bring new ideas to Moore's law.
If calculations are to be believed, the increased current could reduce power loss by about 85 percent compared to FinFET layout of the transistors or increase processor performance by 100 percent. In particular, the use of the new technology will make it possible to charge mobile devices no more than once a week.
The essence of the innovation is the placement of transistors perpendicularly and vertically on the silicon substrate, which will significantly increase the current limits of processor performance and bring new ideas to Moore's law.
If calculations are to be believed, the increased current could reduce power loss by about 85 percent compared to FinFET layout of the transistors or increase processor performance by 100 percent. In particular, the use of the new technology will make it possible to charge mobile devices no more than once a week.